 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, Pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 20 30 10 9 48 40 12 10 30 5 250 -55 ... +150 150 -55 ... +150 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 V V V V A A A A A A mJ V/ns W C C C C V~ g Features ISOPLUS 247TM VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight G D Isolated back surface* D = Drain G = Gate S = Source * Patent pending * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<50pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 5.5 100 TJ = 25C TJ = 125C 12N100 10N100 50 1 1.05 1.2 V V nA mA mA W W Advantages * Easy assembly * Space savings * High power density * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 4mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2 IXYS reserves the right to change limits, test conditions, and dimensions. 98589 (1/99) (c) 2000 IXYS All rights reserved 1-2 IXFR 10N100Q IXFR 12N100Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 4 10 2900 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 50 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 W (External), 23 40 15 90 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 30 40 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = IT Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.3 200 A A V ns mC A Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = Is, -di/dt = 100 A/ms, VR = 100 V 1.6 7 Note: 1. Pulse test, t 300 ms, duty cycle d 2 % IXFR10N100 IT = 5A 2. IT test current: IXFR12N100 IT = 6A (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
Price & Availability of IXFR12N100Q
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |